Central Semiconductor CMPTA06 TR PBFREE BJTs - 바이폴라 트랜지스터 NPN 중전력

Width: 1.4 mm

Height: 0.96 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 50 at 10 mA, 1 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 450 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 10 mA, 1 V, 50 at 100 mA, 1 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 250 mV