CML Micro MWT-LN300 RF MOSFET 트랜지스터 저잡음 pHEMT 장치

Gain: 10 dB, 13 dB

Technology: GaAs

Output Power: 16 dBm

Transistor Type: pHEMT

Operating Frequency: 26 GHz

Pd - Power Dissipation: 300 mW

Id - Continuous Drain Current: 120 mA

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 160 mS

Vds - Drain-Source Breakdown Voltage: 4 V