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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Gain: 9 dB
Technology: GaAs
Unit Weight: 0.140 mg
Output Power: 32 dBm
Transistor Type: pHEMT
Operating Frequency: 12 GHz
Id - Continuous Drain Current: 440 mA to 800 mA
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 8 V