CML Micro MWT-PH8F RF 전력 MOSFET 협대역 및 광대역 고효율 증폭기, 고출력 증폭기 및 발진기 응용

Gain: 11 dB

Technology: GaAs

Unit Weight: 0.110 mg

Output Power: 30 dBm

Transistor Type: pHEMT

Operating Frequency: 18 GHz

Id - Continuous Drain Current: 250 mA to 300 mA

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 8 V