Comchip Technology CJ3139KDW-G MOSFETs MOSFET 듀얼 P-채널

Fall Time: 20.3 ns

Rise Time: 5.8 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 32.7 ns

Id - Continuous Drain Current: 660 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 0.8 S

Rds On - Drain-Source Resistance: 520 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 350 mV