Diodes Incorporated DDTB114EU-7-F Pre-Biased Bipolar Transistor

R1/R2: 1

Rated power: 200mW

Mounting Type: Surface Mount

Power-Maximum: 200mW

Transistor type: PNP-Prebias

Collector current: 500mA

DC electricity gain: 56@50mA|5V

Frequency-Transition: 200MHz

Resistance-Base (R1): 10kOhm

Vce Saturation (maximum): 300mV@2.5mA|50mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 10kOhm

DC current gain (hFE) (minimum): 56@50mA,5V

Current-Collector (Ic) (maximum): 500mA

Current-Collector cutoff (maximum): 500nA

Voltage-Collector-emitter breakdown (maximum): 50V

Datasheet