Diodes Incorporated DMN2029USD-13 MOSFETs 20V 듀얼 N-채널 ENH 20V 25mOhm 4.5V 5.8A

Fall Time: 53.5 ns

Rise Time: 10.4 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 10.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.2 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 16.5 ns

Typical Turn-Off Delay Time: 119.3 ns

Id - Continuous Drain Current: 5.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 25 mOhms, 25 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V