Diodes Incorporated DMN62D1LFB-7B MOSFETs MOSFET BVDSS: 41V-60V X1-DFN1006-3 T&R 10K

Fall Time: 16.3 ns

Rise Time: 3.4 ns

Technology: Si

Unit Weight: 80 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 450 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.4 ns

Typical Turn-Off Delay Time: 26.4 ns

Id - Continuous Drain Current: 410 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V