Diodes Incorporated DMN62D2UDWQ-7 MOSFETs MOSFET BVDSS: 41V-60V SOT363 T&R 3K

Fall Time: 19.5 ns

Rise Time: 9.7 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 800 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 1.5 ns

Typical Turn-Off Delay Time: 22.6 ns

Id - Continuous Drain Current: 340 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V