Diodes Incorporated DMP31D7LDW-7 MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 3K

Fall Time: 237 ns

Rise Time: 2.3 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 800 pC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 290 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.3 ns

Typical Turn-Off Delay Time: 406 ns

Id - Continuous Drain Current: 550 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 900 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V