Diodes Incorporated DMPH6050SK3Q-13 MOSFETs MOSFET BVDSS: 41V-60

Fall Time: 29.7 ns

Rise Time: 8.6 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.9 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.3 ns

Typical Turn-Off Delay Time: 49.4 ns

Id - Continuous Drain Current: 23.6 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 70 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V