Diodes Incorporated DMT3006LFV-7 MOSFETs MOSFET BVDSS: 25V-30V

Fall Time: 4.6 ns

Rise Time: 5.5 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

Configuration: Single

Transistor Type: 1 N-Channel

Qg - Gate Charge: 8.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.5 ns

Typical Turn-Off Delay Time: 13.5 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V