Diodes Incorporated DMTH10H010SPS-13 MOSFETs MOSFET BVDSS: 61V-100V

Fall Time: 29.5 ns

Rise Time: 22.5 ns

Technology: Si

Unit Weight: 97 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 56.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 166 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 18.6 ns

Typical Turn-Off Delay Time: 44.8 ns

Id - Continuous Drain Current: 123 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 8.8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V