Diodes Incorporated DMTH3004LPSQ-13 MOSFETs MOSFET BVDSS

Technology: Si

Unit Weight: 96 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 43.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V