Diodes Incorporated DVR5V0W-7 BJTs - 바이폴라 트랜지스터 복합 배열

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150 at 100 mA, 1 V

Collector- Emitter Voltage VCEO Max: 18 V

Collector-Emitter Saturation Voltage: 500 mV