Diodes Incorporated DXTN3C60PSQ-13 BJTs - 바이폴라 트랜지스터 60V NPN 중간 전력 저 포화 트랜지스터

Technology: Si

Unit Weight: 97 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: NPN

Pd - Power Dissipation: 5 W

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 180 mV