Diodes Incorporated FCX1149ATA BJTs - 바이폴라 트랜지스터 PNP 저포화

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 270

Gain Bandwidth Product fT: 135 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 150 at 3 A, 2 V, 115 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 230 mV