Diodes Incorporated FZT953TA BJTs - 바이폴라 트랜지스터 PNP 고전류 저포화

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 110 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 3 W

DC Current Gain hFE Max: 100

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 420 mV