Diodes Incorporated ZTX651 BJTs - 바이폴라 트랜지스터 NPN 슈퍼 E-라인

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 230 mV