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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Vgs(th): 3 V
Vgs (Max): 20V
Power consumption: 625mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 200V
Continuous drain current: 100mA
Input Capacitance (Ciss): 45pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 25Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
