Diodes Incorporated ZXTN04120HFFTA 다링턴 트랜지스터 NPN 120V 다링턴 트랜지스터

Width: 1.7 mm

Height: 1 mm

Length: 3 mm

Unit Weight: 97.700 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

DC Current Gain hFE Max: 3000

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 140 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 3000 at 50 mA at 5 V, 3000 at 500 mA at 5 V, 3000 at 1 A at 5 V, 1000 at 2 A at 5 V

Maximum Collector Cut-off Current: 100 nA

Collector- Emitter Voltage VCEO Max: 120 V