Diodes Incorporated ZXTN19020DFFTA BJTs - 바이폴라 트랜지스터 NPN 20V 고이득

Width: 1.7 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 36 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 900

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 70 V

Maximum DC Collector Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 190 mV