Diodes Incorporated ZXTP07040DFFTA BJTs - 바이폴라 트랜지스터 PNP 40V 고이득

Width: 1.7 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 36 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 1 A, 2 V, 80 at 3 A, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 250 mV