Diodes Incorporated ZXTP2006E6TA BJTs - 바이폴라 트랜지스터 20V PNP 저포화

Width: 1.8 mm

Height: 1.3 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 6.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.7 W

DC Current Gain hFE Max: 900

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 7.5 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: - 3.5 A

Maximum DC Collector Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 110 mV