Diodes Incorporated ZXTP2013ZTA BJTs - 바이폴라 트랜지스터 100V PNP 저포화

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.1 W

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: - 3.5 A

Maximum DC Collector Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 240 mV