Diodes Incorporated ZXTP23140BFHTA BJTs - 바이폴라 트랜지스터 PNP 중간 전력

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.81 W

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 160 V

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 190 mV