Diotec Semiconductor DI048N04PQ2 MOSFETs MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N

Fall Time: 2 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 200 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: Power MOSFET

Qg - Gate Charge: 48 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 47 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 48 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 24 S

Rds On - Drain-Source Resistance: 8 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V