Diotec Semiconductor DI068P04D1-AQ MOSFETs MOSFET, DPAK, -40V, -68A, 150C, P, AEC-Q101

Fall Time: 9 ns

Rise Time: 48 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 125 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 54 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 43 ns

Id - Continuous Drain Current: 68 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40.6 S

Rds On - Drain-Source Resistance: 7.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V