Diotec Semiconductor DI200N04PQ MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N

Fall Time: 10 ns

Rise Time: 7.8 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 92 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 180 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14.3 ns

Typical Turn-Off Delay Time: 57 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 155 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 87 S

Rds On - Drain-Source Resistance: 1.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 4 V