Diotec Semiconductor DI7A6N04SQ2 MOSFETs MOSFET, SO-8, 40V, 7.6A, 150C, N

Fall Time: 8.5 ns

Rise Time: 43 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 18 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.2 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 7.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V