Diotec Semiconductor DIF120SIC028 MOSFET

Fall Time: 49 ns

Rise Time: 104 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 373 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 715 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 156 ns

Typical Turn-Off Delay Time: 156 ns

Id - Continuous Drain Current: 118 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 45 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V