Diotec Semiconductor DIT195N08 MOSFETs MOSFET, TO-220AB, 85V, 195A, 175C, N

Fall Time: 78 ns

Rise Time: 124 ns

Technology: Si

Unit Weight: 2.820 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Power MOSFET

Qg - Gate Charge: 140 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 147 ns

Typical Turn-Off Delay Time: 162 ns

Id - Continuous Drain Current: 195 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.1 mOhms

Vds - Drain-Source Breakdown Voltage: 85 V

Vgs th - Gate-Source Threshold Voltage: 3.2 V