Fairchild 2N5551BU BJTs - 바이폴라 트랜지스터 NPN 트랜지스터 범용

Width: 3.93 mm

Height: 4.7 mm

Length: 4.7 mm

Technology: Si

Unit Weight: 200 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV