Fairchild 2N6520TA BJTs - 바이폴라 트랜지스터 PNP Si 트랜지스터 에피택셜

Width: 3.93 mm

Height: 4.7 mm

Length: 4.7 mm

Technology: Si

Unit Weight: 240 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 350 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 1 V