Fairchild BC559CTA BJTs - 바이폴라 트랜지스터 트랜지스터 PNP 에피택셜 실리콘

Width: 4.19 mm

Height: 5.33 mm

Length: 5.2 mm

Technology: Si

Unit Weight: 240 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 250 mV