Fairchild BD13610S BJTs - 바이폴라 트랜지스터 PNP Si 트랜지스터 에피택셜

Width: 3.25 mm

Height: 11 mm

Length: 8 mm

Technology: Si

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 12.5 W

DC Current Gain hFE Max: 250

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Continuous Collector Current: - 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV