Fairchild BUT11A BJTs - 바이폴라 트랜지스터 NPN 실리콘 트랜지스터

Width: 4.7 mm

Height: 9.4 mm

Length: 10.1 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 1 kV

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 450 V

Collector-Emitter Saturation Voltage: 1.5 V