Fairchild FCH35N60 MOSFETs 600V N-채널 SuperFET

Width: 4.82 mm

Height: 20.82 mm

Length: 15.87 mm

Fall Time: 73 ns

Rise Time: 120 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 139 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 312.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 34 ns

Typical Turn-Off Delay Time: 105 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 28.8 S

Rds On - Drain-Source Resistance: 79 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 5 V