Fairchild FDA16N50LDTU MOSFETs 500V MOSFET UniFET N-채널

Width: 16.2 mm

Height: 5 mm

Length: 20.1 mm

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 45 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 205 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 16.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 380 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 3 V