Fairchild FDMD8900 MOSFETs PT8 30/12V 듀얼 N채널 파워 트렌치 MOSFET

Width: 3.3 mm

Height: 0.8 mm

Length: 5 mm

Fall Time: 2.4 ns, 2.3 ns

Rise Time: 2.3 ns, 2 ns

Technology: Si

Unit Weight: 82.320 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 25 nC, 19 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27 W, 15 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 8.7 ns, 7.1 ns

Typical Turn-Off Delay Time: 25 ns, 22 ns

Id - Continuous Drain Current: 66 A, 42 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 86 S, 80 S

Rds On - Drain-Source Resistance: 4 mOhms, 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V