Fairchild FGA30N65SMD IGBT 트랜지스터 IGBT, 650V, 30A, 필드 스톱

Technology: Si

Unit Weight: 6.401 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 300 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 1.98 V

Continuous Collector Current at 25 C: 60 A