Fairchild FQA40N25 MOSFET 250V N-채널 QFET

Width: 5 mm

Height: 20.1 mm

Length: 16.2 mm

Fall Time: 165 ns

Rise Time: 580 ns

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 110 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 280 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 70 ns

Typical Turn-Off Delay Time: 120 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 70 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 3 V