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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Width: 4.19 mm
Height: 5.33 mm
Length: 5.2 mm
Technology: Si
Unit Weight: 201 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Gate-Source Cutoff Voltage: - 4.5 V
Maximum Drain Gate Voltage: 25 V
Id - Continuous Drain Current: 20 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vgs - Gate-Source Breakdown Voltage: - 25 V
