Fairchild KSB1151YSTU BJTs - 바이폴라 트랜지스터 PNP 에피택셜 실리콘

Width: 3.25 mm

Height: 1.5 mm

Length: 8 mm

Technology: Si

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 20 W

DC Current Gain hFE Max: 400

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 140 mV