Fairchild KSC388CYTA BJTs - 바이폴라 트랜지스터 NPN 에피택셜 실리콘

Width: 3.93 mm

Height: 4.7 mm

Length: 4.7 mm

Technology: Si

Unit Weight: 240 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 200 mV