Fairchild MMBT100 BJTs - 바이폴라 트랜지스터 NPN 트랜지스터 범용

Width: 1.3 mm

Height: 0.93 mm

Length: 2.92 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 400 mV