Fairchild SGP10N60RUFDTU IGBT 트랜지스터 단락 회로 정격 IGBT

Width: 4.7 mm

Height: 9.4 mm

Length: 10.1 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 75 W

Continuous Collector Current: 16 A

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 16 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 16 A