Vishay General Semiconductor SIHD6N62E-GE3 MOSFETs 620V Vds 30V Vgs DPAK (TO-252)

Fall Time: 16 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 78 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 900 mOhms

Vds - Drain-Source Breakdown Voltage: 620 V

Vgs th - Gate-Source Threshold Voltage: 4 V