Vishay General Semiconductor SIJA54ADP-T1-GE3 MOSFETs POWRPK N CHAN 40V

Fall Time: 74 ns

Rise Time: 99 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 105 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 278 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 78 ns

Typical Turn-Off Delay Time: 96 ns

Id - Continuous Drain Current: 47 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 21 S

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 5 V