Vishay General Semiconductor SIRB40DP-T1-GE3 MOSFETs 40V Vds 20V Vgs PowerPAK SO-8

Width: 5.15 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 12 ns

Rise Time: 96 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 93 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 46.2 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Typical Turn-On Delay Time: 29 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 76 S

Rds On - Drain-Source Resistance: 3.25 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V